Conduction-band offsets in pseudomorphic InxGa1-xAs/Al0.2Ga0.8As quantum wells (0.07x0.18) measured by deep-level transient spectroscopy

Abstract

The variation of the potential of a quantum well is similar to that of a deep trap. In that respect a quantum well can capture and emit carriers in much the same way as a trap. The thermal emission energy from a quantum well is closely related to the appropriate band offset. With that in mind, we have carried out deep-level transient spectroscopy measurements on Schottky-barrier diodes containing one or more pseudomorphic InxGa1-xAs/Al0.2Ga0.8As (0