Abstract
In this work we present a model qubit whose basis states are eigenstates of a multi-layered quantum dot. We show that the proper design of the quantum dot results in qubit states that have excellent dynamical properties when a time-dependent driving is applied to it. In particular, it is shown that a simple sinusoidal driving is sufficient to obtain good quality Rabi oscillations between the qubit states. Moreover, the switching between states can be performed with very low leakage, even under off-resonance conditions. In this sense, the quantum control of the qubit is robust under some perturbations and achieved with simple means. More precisely, in this article, we propose a device that is within the reach of current semiconductor technology, a ZnS/CdSe/ZnS/CdSe/ZnS layered quantum dot. In addition, in order to clarify, we show a more general and theoretical model, which we believe is helpful in order to search the ideal experimental device. © 2013 American Institute of Physics.
Cite
CITATION STYLE
Ferrón, A., Serra, P., & Osenda, O. (2013). Quantum control of a model qubit based on a multi-layered quantum dot. In Journal of Applied Physics (Vol. 113). https://doi.org/10.1063/1.4795608
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