Studies on the seebeck effect in semiconducting ZnO thin films

Abstract

For ZnO thin films prepared by a pyrolytic technique, the thermoelectric power has been measured from room temperature up to 200 °C with reference to pure lead. The thickness and temperature dependence of its related parameters have been studied. The Fermi levels were determined using a nondegenerate semiconducting model. The carrier scattering index, activation energy and temperature coefficient of activation energy, have all been obtained at different ranges of thickness and temperature. All the samples were polycrystalline in structure and optically transparent. © 1992 Chapman & Hall.