Control of Deposition Profile and Properties of Plasma CVD Carbon Films

Abstract

We have succeeded to deposit anisotropic and top surface deposition profile on substrates with trenches using H-assisted plasma CVD of Ar + H2 + C7H8 at a low substrate temperature of 100 oC. For the anisotropic deposition profile, carbon is deposited without being deposited on side-wall of trenches. For the top surface deposition profile, carbon is deposited at only top surface. The optical emission measurements and evaluation of deposition rate have revealed that a high flux of H atmos is the key to the deposition profile control. The mass density of the films and their Raman spectrum have shown that their structure is a-C:H.