The Impurity States in InxGa1-xAs/GaAs Core-shell Quantum Dot Under the Influence of Hydrostatic Pressure and Temperature

Abstract

In the theoretical framework of the effective mass envelope function approximation, the energy of impurity state is calculated in InxGa1-xAs/GaAs core-shell quantum dot using the plane wave expansion method, and the effects of hydrostatic pressure and temperature are considered. The impurity energy increases with the shell thickness and stabilizes when the shell thickness is greater than 0.4a *; the impurity energy decreases with the inner core radius; the impurity energy is symmetrically distributed in quantum dot. The application of hydrostatic pressure and temperature do not change the symmetric distribution of impurity state energy. As the hydrostatic pressure (temperature) increases, the energy of the impurity state gradually increases (decreases). The hydrostatic pressure and temperature effects are more pronounced in 1 s state than in 2p± state; the hydrostatic pressure and temperature effects are also more pronounced in the center of the quantum dot.