CVD synthesis of boron nitride from a solid precursor

Abstract

Here we report on the studies of the controllable synthesis of large area boron nitride films by the resistive heating method on a metal substrate without using a dangerous boron and nitrogen containing gases. In our original home-made CVD setup, we used the copper foil as a metal catalytic substrate. With the solid precursor of ammonia borane, the boron nitride films were synthesized under low pressure conditions and at a growth temperature of about 1000°C. We obtained the films with an area of up to 1x1 cm2 by varying the synthesis parameters. The quality of boron nitride films was characterized using Raman spectroscopy and X-ray spectroscopy.