Current-voltage characteristics of nanowires formed at the Co-Ge 99.99Ga0.01 interface

Abstract

We present a method of measurement of the current-voltage (I-V ) and conductance-voltage (G-V ) characteristics of nanowires with quantum point contact formed at the Co-Ge99.99Ga0.01 interface. The effect of the Fermi level pinning leads to the formation of an ohmic contact between Co and Ge99.99Ga0.01. On the measured characteristics, above the threshold value of voltage an exponential current growth is observed. Such effect could be useful in the production of the electronic nanodevices.