Abstract
The model of electron-hole pairs generation rate distribution in semiconductor is needed to optimize the parameters of microporous silicon betaelectric converter, which uses 63Ni isotope radiation. By using Monte-Carlo methods of GEANT4 software with ultra-low energy electron physics models this distribution in silicon was calculated and approximated with exponential function. Optimal pore configuration was estimated.
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CITATION STYLE
Zelenkov, P. V., Sidorov, V. G., Lelekov, E. T., Khoroshko, A. Y., Bogdanov, S. V., & Lelekov, A. T. (2016). Modeling of microporous silicon betaelectric converter with 63Ni plating in GEANT4 toolkit. In IOP Conference Series: Materials Science and Engineering (Vol. 122). Institute of Physics Publishing. https://doi.org/10.1088/1757-899X/122/1/012036
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