Abstract
In this paper we continue the previous investigations on nanostructured GexSi1-x films. The films were deposited by magnetron sputtering and annealed in N2 atmosphere at 700°C. Their structure was investigated and correlated with the electrical behavior. For this, conventional and high-resolution transmission electron microscopy together with selected area electron diffraction was used. Electrical measurements of current-voltage and current-temperature curves were made. The majority of crystallites that forms the films have the composition Ge50Si 50 and 15-30 nm size. The I-T characteristics have Arrhenius dependence, with two activation energies interpreted as transitions between quantum confinement levels. © 2012 IEEE.
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Lepadatu, A. M., Stavarache, I., Maraloiu, A., Palade, C., Serban, T. V., & Magdalena, C. L. (2012). Electrical behaviour related to structure of nanostructured GeSi films annealed at 700°C. In Proceedings of the International Semiconductor Conference, CAS (Vol. 1, pp. 109–112). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/SMICND.2012.6400683
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