Diffusion and Incorporation of Aluminum in Silicon

Abstract

Aluminum is used as a p-type dopant in the manufacture of high power devices. The results of thermodynamic and experimental studies of the Al-Si-H-O system are discussed. Reaction with the quartz wall and moisture in the closed tube diffusion of aluminum causes the source to oxidize and reduces the aluminum partial pressure. Solutions to these problems are discussed. Heat-treatment of diffused wafers under various temperature-time conditions followed by Hall effect and resistivity measurements are performed to study possible formation of donor complexes. © 1977, The Electrochemical Society, Inc. All rights reserved.