Enhancement-mode vertical (100) β-Ga2O3FinFETs with an average breakdown strength of 2.7 MV cm-1

Abstract

In this work, we report on the realization of vertical (100) β-Ga2O3 FinFET devices for the use in power electronics applications. The experiments are carried out on structures consisting of highly conducting (100) β-Ga2O3 substrates with a doping concentration N D of 3 × 1018 cm-3, and epitaxially grown layers with N D of 5 × 1016 cm-3 for the drift and channel region. The fabricated FinFET devices feature enhancement-mode properties with a threshold voltage of +4.2 V and on/off-current ratio of 105. Moreover, breakdown measurements of these devices reveal an average breakdown strength of 2.7 MV cm-1. Additional device simulation indicates the presence of electric field peaks near the gate edge outside the active device as high as 7 and 5 MV cm-1 in the Al2O3 gate oxide and β-Ga2O3 semiconductor, respectively.