Abstract
Quantum emitters in solid-state materials are highly promising building blocks for quantum information processing and communication science. Recently, single-photon emission from van der Waals materials has been reported in transition metal dichalcogenides and hexagonal boron nitride, exhibiting the potential to realize photonic quantum technologies in two-dimensional materials. Here, we report the generation of room temperature single-photon emission from exfoliated and thermally annealed single crystals of van der Waals α-MoO3. The second-order correlation function measurement displays clear photon antibunching, while the luminescence intensity exceeds 0.4 Mcts/s and remains stable under laser excitation. The theoretical calculation suggests that an oxygen vacancy defect is a possible candidate for the observed emitters. Together with photostability and brightness, quantum emitters in α-MoO3 provide a new avenue to realize photon-based quantum information science in van der Waals materials.
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CITATION STYLE
Lee, J., Wang, H., Park, K. Y., Huh, S., Kim, D., Yu, M., … Lee, J. (2025). Room Temperature Quantum Emitters in van der Waals α-MoO3. Nano Letters, 25(3), 1142–1149. https://doi.org/10.1021/acs.nanolett.4c05594
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