Equilibrium dissociation configuration of misfit dislocations in low strained In0.1Ga0.9As/GaAs single heterostructures

Abstract

Equilibrium dissociation configurations of 60°misfit dislocations in low strained [001] In0.1Ga0.9As/GaAs single heterostructures are investigated by high resolution electron microscopy. The dissociation configuration of misfit dislocations is with the 90°partial being located near the strained interface and the 30°partial lying in the substrate. The equilibrium dissociation width of misfit dislocations has the same value as that in the bulk GaAs material. This equilibrium geometry is explained using the elasticity theory.