High current gain 4H-SiC NPN bipolar junction transistors

Abstract

The authors report a common emitter current gain β of 55 in npn epitaxial-emitter 4H-SiC bipolar junction transistors. The spacing between the p+ base contact implant and the edge of the emitter finger is critical in obtaining high-current gain. VCEO of these devices is 500 V, and VCBO is 700 V.