The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers

Abstract

We prepared InGaN/GaN multiquantum wells (MQWs) with InGaN/GaN strained layer superlattice (SLS) underlayer and with GaN/AlGaN SLS underlayer to create different Vshaped pits. It was found that pit density became smaller while pit depth and pit diameter both became larger, as compared to the sample without SLS. It was also found that sample surface became rougher with the SLS. Furthermore, it was found that light output intensities observed from the samples with SLS were stronger. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.