Mechanical deformation of atomically thin layers during stamp transfer

Abstract

The way transition metal dichalcogenide (TMD) strains during its transfer from one substrate to another is very interesting and holds a special place in the creation of heterostructures. In our work we observe the spectrum of photoluminescence in TMD during the transfer. For this we use a specially designed transfer system with inverted geometry. During transfer we observe a modification of exciton photoluminescence linewidth and resonance shift in atomically thin layers of TMD. We believe that our results lay grounds for the future work on the assessment of the atomically thin layer inhomogeneity introduced by the typical mechanical transfer.