Ion beam synthesis of silicon nano-crystals for electronics and photonics

Abstract

The present contribution addresses Si nanocrystal (NC) formation by conventional ion implantation into the gate oxide and by a non-conventional IBS approach of ion beam mixing of SiO2/Si interfaces in thin gate oxides, with special emphasis on well-controlled size and position tailoring. The two approaches will be compared and related technological challenges discussed. Compared to conventional Si NC synthesis by Si+ ion implantation into the gate oxide, we take advantage of the self-alignment ion beam mixing process, i.e., the Si NCs are formed in SiO2 at a well-controlled small distance of ∼2 nm from the Si/SiO2 interfaces. The technical applications in non-volatile nanocrystal memories and in light emitting field-effect transistors (LEFET) are demonstrated. © 2011 American Institute of Physics.