Study of high quality indium nitride films grown on Si(100) substrate by RF-MOMBE with GZO and AlN buffer layers

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Abstract

Wurtzite structure InN films were prepared on Si(100) substrates using radio-frequency metal-organic molecular beam epitaxy (RF-MOMBE) system. Ga-doped ZnO (GZO) and Amorphous AlN (a-AlN) film were used as buffer layers for InN films growth. Structural, surface morphology and optical properties of InN films were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and photoluminescence (PL). XRD results indicated that all InN films exhibited preferred growth orientation along the c-axis with different intermediate buffers. TEM images exhibit the InN/GZO growth by two-dimensional mode and thickness about 900 nm. Also, the InN films can be obtained by growth rate about 1.8 m/h. Optical properties indicated that the band gap of InN/GZO is about 0.79 eV. These results indicate that the control of buffer layer is essential for engineering the growth of InN on silicon wafer. © 2012 Wei-Chun Chen and Shou-Yi Kuo.

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Chen, W. C., & Kuo, S. Y. (2012). Study of high quality indium nitride films grown on Si(100) substrate by RF-MOMBE with GZO and AlN buffer layers. Journal of Nanomaterials, 2012. https://doi.org/10.1155/2012/853021

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