Improvement of the stability of an electric double-layer transistor using a 1H,1H,2H,2H-perfluorodecyltriethoxysilane barrier layer

1Citations
Citations of this article
5Readers
Mendeley users who have this article in their library.
Get full text

Abstract

Electric double-layer transistors (EDLTs) are capable of achieving ultra-high carrier density and very low operating voltages. However, chemical reactions cause structural change at the semiconductor-insulator interface resulting in unstable device operation and reduced device lifetime. In this work we propose a method of depositing a 1H,1H,2H,2H-perfluorodecyltriethoxysilane (FDTS) layer which acts as a barrier between the semiconductor layer and the ionic liquid insulator. Our work shows that the effects of adding FDTS film are isolation of the chemical reaction and reduction of damage to the amorphous InGaZnO channel, thus achieving the effect of increasing device lifetime and stability.

Cite

CITATION STYLE

APA

Liu, Y., Fujii, M. N., Ishida, S., Ishikawa, Y., Miwa, K., Ono, S., … Uraoka, Y. (2019). Improvement of the stability of an electric double-layer transistor using a 1H,1H,2H,2H-perfluorodecyltriethoxysilane barrier layer. Japanese Journal of Applied Physics, 58(4). https://doi.org/10.7567/1347-4065/ab008c

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free