Abstract
A "dry" supercritical CO2-based etchant solution containing HF/pyridine as an anhydrous HF source effectively dissolves SiO2 thin films on silicon wafers. These dilute etchant solutions are active in removal of post-etch residues in back-end-of-line cleaning of microelectronic structures.
Cite
CITATION STYLE
APA
Jones, C. A., Yang, D., Irene, E. A., Gross, S. M., Wagner, M., DeYoung, J., & DeSimone, J. M. (2003). HF etchant solutions in supercritical carbon dioxide for “dry” etch processing of microelectronic devices. Chemistry of Materials, 15(15), 2867–2869. https://doi.org/10.1021/cm034235w
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