Abstract
A prototype nano-photodiode has been demonstrated based on heterojunctions between ZnO nanowires and p-Si substrate. The electrical and photoelectrical performances of the ZnO/Si structure have been characterized by a conducting atomic force microscopy at nanometer spatial resolution. The photoelectrical measurements demonstrate that the photodiode has high sensitivity and selectivity to UV light. © 2006 Elsevier B.V. All rights reserved.
Cite
CITATION STYLE
He, J. H., Ho, S. T., Wu, T. B., Chen, L. J., & Wang, Z. L. (2007). Electrical and photoelectrical performances of nano-photodiode based on ZnO nanowires. Chemical Physics Letters, 435(1–3), 119–122. https://doi.org/10.1016/j.cplett.2006.12.061
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