Interface effects in ZnO metal-insulator-semiconductor and metal-semiconductor structures

Abstract

ZnO metal-insulator-semiconductor(MIS) and metal-semiconductor(MES) field effect transistors with very low leakage gate currents in the range of picoampere were fabricated by pulsed-laser deposition to study the influence of interface scattering on the lateral electronic transport. Channel mobilities were increased by successive elimination of electron-scattering mechanisms by means of different ZnO transistor types: heteroepitaxial MISFET, MESFET and high-electron-mobility transistor (HEMT) on a-sapphire substrate as well as homoepitaxial MESFET on ZnO substrate. © 2009 American Institute of Physics.