Measurement of silicon surface recombination velocity using ultrafast pump-probe reflectivity in the near infrared

Abstract

We demonstrate that ultrafast pump-probe reflectivity measurements from bulk Si samples using a Ti:sapphire femtosecond oscillator (λ = 800 nm) can be used to measure the Si surface recombination velocity. The technique is sensitive to recombination velocities greater than ∼ 104 cm s-1. © 2000 American Institute of Physics.