Raman induced wavelength conversion in scaled siliconwaveguides

Abstract

Parametric Raman nonlinearities in Silicon waveguides is used to demonstrate wavelength conversion from Stokes to anti-Stokes channels. The effects of two photon absorption and free carrier nonlinear losses on the conversion process have also been analyzed. We find that scaling down the waveguide dimensions to submicron sizes is advantageous in terms of increasing the Raman nonlinearities and reducing the carrier lifetime and hence nonlinear absorption. © 2004, The Institute of Electronics, Information and Communication Engineers. All rights reserved.