High-resolution stress assessments of interconnect/dielectric electronic patterns using optically active point defects of silica glass as a stress sensor

Abstract

A piezospectroscopic (PS) cathodoluminescence (CL) study has been carried out on a Cu-Ta SiOx (carbon-doped) model chip prepared on a Si substrate. The PS approach was applied to CL spectra arising from optically active point defects in dielectric silica. The red CL emission arising from nonbridging oxygen hole centers (NBOHC) in the carbon-doped SiOx dielectric layer was calibrated and used as a stress sensor. This approach enabled us to locate the trace of the residual stress tensor, as locally developed during manufacturing process in the dielectric interlayers between Cu-Ta interconnects. A minimally invasive electron beam allowed probing local residual stress fields with an improved spatial resolution as compared to more conventional photostimulated PS techniques applied to the Si substrate. In addition, a two-dimensional deconvolution procedure was attempted to retrieve the "true" residual stress distribution piled up between adjacent Cu-Ta lines, according to a theoretical model for embedded structural elements. As probed on the nanometer scale by the NBOHC sensor, the interfaces were found under a substantially enhanced residual stress, characteristic for low-temperature Si SiOx growth in the presence of metallic interconnects. CL/PS spectroscopy represents an improved tool to quantitatively monitor the residual stresses developed at SiOx metal interfaces, thus opening the possibility to systematically engineer the interface itself in search for high-reliability Si-based devices. © 2007 American Institute of Physics.