Photoluminescence from single InSb quantum wells

Abstract

The luminescent properties of single InSb quantum wells have been investigated as a function of temperature and incident laser power. A large peak was observed in the photoluminescence, corresponding to emission from the quantum well, which moves to lower energy with increasing temperature and tracks the bulk InSb band gap with a constant energy up-shift of ∼50 meV. The integrated photoluminescence intensity was observed to fall with increasing temperature, with a well defined activation energy of 17 meV at high temperatures, and to be proportional to the square of the excitation intensity. © 2006 American Institute of Physics.