Low-temperature in situ deposited CuI-based hole-transporter for perovskite solar cells efficiency enhancement

Abstract

CuI hole transporter-based perovskite solar cells (PSCs) are prepared via a low-temperature in situ deposition method. As demonstrated, the results of x-ray diffraction indicate that the CuI hole-transporter has been fabricated successfully and obtained a better stability, and this can be supported by corresponding scanning electron microscopy, including the dense surface and clear cross section. Furthermore, a maximum incident photon-to-electron conversion efficiency (IPCE) of ∼16.78% is obtained at the CuI-based PSC cell with 2nd time deposition, which can be mainly attributed to the fact that, with the fewer defects in the high-quality interface and matched potential structure for promoting carrier interface immigration/diffusion, the CuI-based hole-transporter exhibits decent hole-extraction to make photo-generated electron/holes have a matched mobility. The remaining PbI2, with a better passivation, can inhibit carrier recombination, and both can improve the IPCE efficiently. Therefore, this lower cost and easily controlled technique is suitable for large-scale solar cells.