Electrical characteristics of metal contacts to boron-doped diamond epitaxial film

Abstract

Current-voltage characteristics have been obtained for various metal contacts formed on boron-doped diamond epitaxial film prepared on synthesized Ib diamond by the microwave plasma-assisted chemical vapor deposition method. Ti contacts and W contacts have exhibited good ohmic and Schottky properties, respectively. For the first time, we have fabricated Schottky diodes on boron-doped diamond epitaxial films using these contacts and investigated their properties. © 1989 The Japan Society of Applied Physics.