Abstract
InAs quantum dots (QDs) are grown epitaxially on the {112} side facets of InP nanowires (NWs) by metal organic chemical vapor deposition. The QDs typically have a large size and consist of some specific facets. The QDs exhibit mainly zinc blende structure with stacking faults, which is consistent with the adjacent NW. No QDs are observed on the wurtzite (WZ) part of NW, which is attributed to a lower surface energy of WZ facet. The random distribution of the QDs indicates that the In adatoms may mainly come from the vapor rather than the substrate.
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CITATION STYLE
Yan, X., Zhang, X., Li, J., Cui, J., Wang, S., Fan, S., … Ren, X. (2013). Growth and characterization of InAs quantum dots on InP nanowires with zinc blende structure. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 31(5). https://doi.org/10.1116/1.4818509
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