Reverse engineering of AlxGa1-xAs/GaAs structures composition by reflectance spectroscopy

Abstract

The paper presents the application of non-modulation reflectance method for composition profiling of epitaxial AlxGa-xAs/GaAs structures. This non-destructive method is based on spectral measurements and theoretical reflectance spectrum matching. This is a very accurate and sensitive method of determining the Al composition in AlxGa1-xAs layers and structures with resolution down to 1 nm. In this work, the authors describe theoretic principles of this method and present experimental results of characterization of different AlGaAs structures to prove the potential of the worked out method. © 2011 Versita Warsaw and Springer-Verlag Wien.