Benchmarking of Digital Gate Driven IGBTs: New Eoff-Vsurge Trade-off Approach

Abstract

Digital gate driving methods have been recently proposed to control the IGBT switching transient by dynamically changing the drive power according to the input digital pattern. It has been reported that both surge voltage suppression and turn-off loss reduction can be consistently achieved. In the prior papers, however, the effect is evaluated based on only one optimum point, so that the effect of digital gate driving technology have not been accurately benchmarked for practical use. In this paper, we proposed a new benchmarking method for digital gate driven IGBTs using an approach of Eoff-Vsurge Trade-off shifts. We applied the proposed method to 12 types of IGBT samples and analyzed the benchmarking results.