Computational investigation of half-Heusler/MgO magnetic tunnel junctions with (001) orientation

Abstract

A series of half-metallic XYZ half-Heusler alloys is combined with MgO to create Heusler-MgO junctions. The electronic and magnetic properties of these junctions are investigated. The strong oxidation between metal and oxygen atoms causes the systems with pure YY interfaces to be the most stable cases. We conclude that uniaxial anisotropy can be induced in Heusler layers adjacent to MgO. The type of interface layers determines the half-metallicity and anisotropy (in-plane or perpendicular) in the Heusler-MgO junctions. The capacity to retain both half-metallicity and perpendicular magnetic anisotropy in NiMnSb/MgO and CoTiSn/MgO junctions with a MnMn interface layer makes these structures potential candidates as electrode layers in spin transfer torque random access memory devices.