Experimental Confirmation of Equivalence of Proton- and Neutron-Induced Energy-Dependent SEU Cross Sections for Sub-100-nm Bulk Planar SRAM-Based FPGAs

Abstract

We measured energy-dependent proton-induced single-event upset (SEU) cross sections for sub-100-nm bulk planar static random access memory (SRAM)-based field-programmable gate arrays (FPGAs) at 10-220 MeV. The proton-induced SEU cross sections were compared with neutron-induced SEU cross sections which had been directly measured. Proton- and neutron-induced SEU cross sections were found to be equivalent above 20 MeV, which indicates they are mutually substitutable for the purposes of SEU rate evaluation of sub-100-nm bulk planar SRAM devices.