Characterizing the electrical properties of a novel junctionless poly-Si ultrathin-body field-effect transistor using a trench structure

Abstract

Ultrathin channel trench junctionless poly-Si field-effect transistor (trench JL-FET) with a 2.4-nm channel thickness is experimentally demonstrated. Dry etching process is used to form trench structures, which define channel thickness (TCH) and gate length (LG). These devices (LG = 0.5 μ m) show excellent performance in terms of steep subthreshold swing (100 mV/decade) and high ION/ IOFF current ratio (106 A/A) and practically negligible drain-induced barrier lowering (∼0 mV/V). The ION current of the trench JL-FET can be further increased by the quantum confinement effect. Importantly, owing to its excellent device characteristics and simplicity of fabrication, the trench JL-FET has great potential for using in advanced 3-D-stacked IC applications.