Light modulation of magnetization switching in PMN-PT/Ni heterostructure

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Abstract

The (011) Pb (Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT)/Ni heterostructure was prepared, and the influence of light on magnetization reversal behaviors of the Ni layer was investigated. We found that the ferroelectric domain of the PMN-PT substrate was tuned by a photostrictive effect, and it further changes the magnetization state of the adjacent Ni layer. Additionally, with electric field polarization, the PMN-PT/Ni heterostructure exhibits controllable magnetization switching behaviors under the application of a proper light intensity. It provides a reliable way to manipulate the magnetization switching process, which is promising for the design and implementation of low power memory and spintronic devices.

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Zhang, X., Guo, X., Cui, B., Yun, J., Mao, J., Zuo, Y., & Xi, L. (2020). Light modulation of magnetization switching in PMN-PT/Ni heterostructure. Applied Physics Letters, 116(13). https://doi.org/10.1063/1.5145284

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