Structural stability of hydrogen forming gas annealed (Ba, Sr)RuO3 oxide electrodes

Abstract

(Ba,Sr)RuO3 (BSR) electrodes were deposited onto Si(100) substrates by liquid delivery metallorganic chemical vapor deposition and investigated for stability under hydrogen forming condition. The BSR films showed structural and morphological stability in hydrogen forming gas (4% H2/balance N2) anneal up to 500°C. The abrupt increase of resistivity with increasing hydrogen anneal temperature was attributed to the oxygen loss in BSR films without phase change and was completely recovered by annealing at 700°C in O2 ambient. The BSR electrodes, with structural and morphological stability in hydrogen forming gas anneal conditions at high temperature, are suitable for integration of high dielectric constant materials.