GaN, AlGaN, HfO2 based radial heterostructure nanowires

Abstract

Gallium nitride based core/shell nanowire heterostructures are promising components for UV optoelectronic nanodevices. A better understanding of their growth mechanisms is required to tailor the growth and the properties of these structures. We report an investigation of GaN-based radial nanowire heterostructures grown by Molecular Beam Epitaxy combined with Atomic Layer Deposition of HfO2 dielectric cladding. The structural quality of GaN nanowire samples coated with different materials, the elemental distribution along the nanowires' length, as well as the elemental incorporation mechanism are discussed. © 2010 IOP Publishing Ltd.