Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance

H. Y. Lee; Y. S. Chen; P. S. Chen; P. Y. Gu; Y. Y. Hsu; S. M. Wang; W. H. Liu; C. H. Tsai; S. S. Sheu; P. C. Chiang; W. P. Lin; C. H. Lin; W. S. Chen; F. T. Chen; C. H. Lien; M. J. Tsai

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Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance

Technical Digest - International Electron Devices Meeting, IEDM (2010)

DOI: 10.1109/IEDM.2010.5703395

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Abstract

The memory performances of the HfOX based bipolar resistive memory, including switching speed and memory reliability, are greatly improved in this work. Record high switching speed down to 300 ps is achieved. The cycling test shed a clear light on the wearing behavior of resistance states, and the correlation between over-RESET phenomenon and the worn low resistance state in the devices is discussed. The modified bottom electrode is proposed for the memory device to maintain the memory window and to endure resistive switching up to 1010 cycles. ©2010 IEEE.

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Lee, H. Y., Chen, Y. S., Chen, P. S., Gu, P. Y., Hsu, Y. Y., Wang, S. M., … Tsai, M. J. (2010). Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance. In Technical Digest - International Electron Devices Meeting, IEDM. https://doi.org/10.1109/IEDM.2010.5703395

Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance

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