Ni/TiO2 ultraviolet detector

Abstract

The fabrication technology of solid-state photon detectors based on semiconductors other than silicon is yet to mature, but their recent progress opens new possibilities. Such devices are especially attractive for ultraviolet radiation level measurements because semiconductor materials with band gaps larger than 3.0 eV can be used as "visible-blind" detectors, the operation of which do not require using visible light filters. Here, fabrication and characterization of a UV detector based on nickel/titanium dioxide Schottky junction is reported. The operation of the device is described based on the photoelectric mechanism taking place in the carrier- depleted oxide adjacent to the Ni layer. Simplicity of fabrication, cost-effectiveness and fast response are the positive features of the device. These features of the device are compared with those of the previously reported Ag/TiO2 UV detectors.