Performance of Silicon Ballistic Nanowire MOSFET with Diverse Orientations and Diameters

Abstract

To investigate the performance of silicon ballistic nanowire MOSFET with diverse orientations and diameters, the subband structure of silicon nanowire has been calculated by using the tight binding simulator, and observed the changing of minimum energy in conduction and valence subband and effective mass of electron and hole. This paper also present a compact model, which is used in numerical evaluation of the current vs. voltage characteristics of ballistic devices. Finally, the drain saturation current of n- and p-channel device with different orientations and diameters is shown.