Electrical Properties of Sn-Doped α-Ga2O3 Films on m-Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition

Abstract

Growth and electrical property of conductive Sn-doped α-Ga2O3 films on m-plane sapphire by mist chemical vapor deposition (mist-CVD) are exhibited. Although the crystallinity is still inferior in comparison with previously reported α-Ga2O3 films on c-plane sapphire, highly crystalline α-Ga2O3 films on m-plane sapphire substrates are grown by applying two-step growth procedure. Carrier concentration of Sn-doped α-Ga2O3 films is controlled in the range of 1017–1019 cm−3 by changing the Sn/Ga concentration ratio in source solution. α-Ga2O3 films on m-plane sapphires with the thickness of 2 μm show mobilities as high as 65 cm2 (V s)−1, which is much higher than previously reported value of 24 cm2 (V s)−1 in the films grown on c-plane sapphire.