Absorption-enhanced ultra-thin solar cells based on horizontally aligned p–i–n nanowire arrays

Abstract

A horizontally aligned GaAs p–i–n nanowire array solar cell is proposed and studied via coupled three-dimensional optoelectronic simulations. Benefiting from light-concentrating and light-trapping properties, the horizontal nanowire array yields a remarkable efficiency of 10.8% with a radius of 90 nm and a period of 5 radius, more than twice that of its thin-film counterpart with the same thickness. To further enhance the absorption, the nanowire array is placed on a low-refractive-index MgF2 substrate and capsulated in SiO2, which enables multiple reflection and reabsorption of light due to the refractive index difference between air/SiO2 and SiO2/MgF2. The absorption-enhancement structure increases the absorption over a broad wavelength range, resulting in a maximum conversion efficiency of 18%, 3.7 times higher than that of the thin-film counterpart, which is 3 times larger in GaAs material volume. This work may pave the way for the development of ultra-thin high-efficiency solar cells with very low material cost.