Size effect of embedded nanocrystals in floating gate MOSFET devices

Abstract

We investigate the transport and retention properties of a floating-gate MOSFET memory device incorporating embedded nanocrystals. Of particular interest is the nanocrystal size effect on the retention lifetime of the device. The quantum confinement effects and changes to the electrostatic energy arising from the decrease of the nanocrystal size are analyzed both numerically and analytically. © 2011 American Institute of Physics.