Scrutiny of structural disorder using Raman spectra and Tauc parameter in GeTe2 thin films

Abstract

The optimization of post deposition annealing in GeTe2 thin films towards structural rearrangements is reported. From X-ray diffraction, the prominent Bragg's peak is identified, and the full width at half maximum (FWHM), grain size, crystal structure, and microstrain are correlated with the annealing temperature. The process of chemical bonding energy from the Raman spectra confers the homopopolar and heteropolar bond formation. However, the assessed structural disorders are discussed in terms of the Tauc parameter.