Evaluation of dissolved oxygen concentration in silicon wafers by measuring infrared attenuated total reflection

Abstract

Dissolved oxygen concentration of silicon wafers were evaluated by measuring infrared absorption of dissolved oxygen in attenuated total reflection (ATR) spectra of silicon wafers and compared with transmission-based evaluation. ATR peak height and the correlation between ATR and transmission was significantly stronger after chemical-mechanical polishing of both sides of wafers to 450 ± 10 µm. The results also indicate that the quantitative evaluation of the oxygen concentration of thin silicon wafers can be done by ATR measurements with appropriate preprocessing.