Atomic layer deposition of TiO2 thin films from Ti(O iPr)2(dmae)2 and H2O

Abstract

TiO2 thin films were grown on Si (100) substrates by atomic layer deposition using [Ti(OPri)2(dmae)2] and water as precursors. The thickness, chemical composition, crystalline structure, and morphology of the deposited films were investigated by transmission electron microscopy, UV spectrometry, X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy. The results show that TiO2 ALD using [Ti(OPri)2(dmae)2] as a precursor is self-controlled at temperatures of 100-300 °C. At the growth temperatures below 300 °C, the surface morphology of the TiO2 films is smooth and uniform. The TiO2 film was grown with a preferred orientation toward the [101] direction at 400 °C.