Fundamentals of light emission from silicon devices

Abstract

The fundamentals of light-emitting phenomena from silicon semiconducting material are presented from an experimental rather than a theoretical point of view. The following aspects are considered in detail. In the first place, laterally resolved measurements give information about the distribution of emitted light, which has been generated by an excited radiative system. Secondly, spectrally resolved experiments enable a distinction to be made between different current transport mechanisms and permit discussion of underlying physical concepts. Thirdly, some fundamental emission mechanisms are discussed on the basis of the dependency of the electroluminescence intensity on such external parameters as temperature and current. Finally, the applicability of these mechanisms with respect to reliability physics, design verification and failure analysis of semiconducting devices is outlined and the state of the art of emission microscopy is reviewed.