Abstract
Al0.33Ga0.32In0.35P/Ga0.65In0.35P double-heterostructure (DH) light-emitting diodes (LEDs) grown on GaAs0.7P0.3 substrates have been fabricated by low-pressure metalorganic vapor-phase epitaxy. We investigate the band gap energy as a function of Al composition in the undoped AlxGa0.65-xIn0.35P alloy with x = 0.0-0.195. Effects of Si and Zn doping on electrical properties have been examined by using disilane and dimethylzinc sources. The DH LED on a bare chip exhibits an emission wavelength around 615 nm and an external quantum efficiency of 0.156% at 20 mA. © 1994.
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CITATION STYLE
Lin, J. F., Wu, M. C., Jou, M. J., Chang, C. M., & Lee, B. J. (1994). AlGaInP/GaInP double-heterostructure orange light-emitting diodes on GaAsP substrates prepared by metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 137(3–4), 400–404. https://doi.org/10.1016/0022-0248(94)90977-6
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