Copper source/drain electrode contact resistance effects in amorphous indium-gallium-zinc-oxide thin film transistors

Abstract

This paper focuses on the viability of low-resistivity electrode material (Cu) for source/drain electrodes in thin film transistors (TFTs). The effective resistances between Cu source/drain electrodes and amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors were examined. Intrinsic TFT parameters were extracted by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low source/drain voltage. The TFTs fabricated with Cu source/drain electrodes showed good transfer characteristics with a field-effect mobility of 9.64 cm2/Vs, and good output characteristics with steep rise in the low VDS region. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.