Electroplated CuInS2 and CuInSe2 layers: Preparation and physical and photovoltaic characterization

Abstract

CuInS2 films prepared by electrodeposition from an aqueous solution of Cu+ and In3+ ions and thiourea, with subsequent annealing in an H2S atmosphere, were characterized by photoelectrochemical measurements in a polysulfide electrolyte and by scanning electron microscopy and microprobe analyses. Laser scanning of the photocurrent together with microprobe analyses correlated n- and p-type behavior with indium-rich and copper-rich areas respectively. For n-type layers, performance appeared to be determined largely by the morphology of the layers. CuInS2 layers were also prepared by electrodeposition of a CuIn alloy and subsequent sulfurization in H2S. The above methods were extended to the preparation of CuIn5S8 (by adjustment of the copper-to-indium ratio in the bath) and CuInSe2 (by heating CuIn films in H2Se). © 1985.